RJH60F4DPQ-A0_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – 600 V - 30 A - IGBT High Speed Power Switching

RJH60F4DPQ-A0
Forward Current vs. Forward Voltage (Typical)
100
80
60
40
20
V_GE = 0 V
Ta = 25°C
Pulse Test
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
Dynamic Input Characteristics (Typical)
800
16
V_GE
V_CE
600
V_CE = 600 V
12
300 V
400
8
200
0
0
4
V_CE = 600 V
300 V
I_C = 30 A ₀
20 40 60 80 100
Gate Charge Qg (nC)
Preliminary
10000
1000
Typical Capacitance vs.
Colloctor to Emitter Voltage
Cies
100
Coes
Cres
10
V_GE = 0 V
f = 1 MHz
Ta = 25°C
1
0 50 100 150 200 250 300
Colloctor to Emitter Voltage V_CE (V)
R07DS0325EJ0200 Rev.2.00
Jul 22, 2011
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