RJH60F4DPQ-A0_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – 600 V - 30 A - IGBT High Speed Power Switching

RJH60F4DPQ-A0
Main Characteristics
Maximum Safe Operation Area
1000
100
10 _μs
10
1
0.1
Ta = 25°C
1 shot pulse
0.01
1
10
100
1000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
120
V_CE = 10 V
100 ^{Pulse Test}
80
60
40 _{Tc = 75°C}
20
25°C
–25°C
0
4
6
8
10
12 14
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.0
V_GE = 15 V
Pulse Test
1.8
I_C = 60 A
1.6
30 A
1.4
15 A
1.2
1.0
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
R07DS0325EJ0200 Rev.2.00
Jul 22, 2011
Preliminary
Typical Output Characteristics
120
Ta = 25°C
Pulse Test
100
11 V
10 V
12 V
80
15 V
9.5 V
60
9V
40
8.5 V
20
V_GE = 8 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Ta = 25°C
Pulse Test
2.4
I_C = 60 A
1.8
1.2
0.6
6
30 A
15 A
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temperature (Typical)
10
V_CE = 10 V
8
6
I_C = 10 mA _{1 mA}
4
2
0
-25 0 25 50 75 100 125 150
Junction Temperature Tj (°C)
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