RJH60D1DPE_11 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter

RJH60D1DPE
Switching Characteristics (Typical) (1)
1000
100
t_f
td(o_ff)
td(on)
10
tr
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Ta = 25°C
1
2
5
10
20
50
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
V_CC = 300 V, V_GE = 15 V
I_C = 10 A, Ta = 25°C
100 ^td(off)
t_f
td(on)
tr
10
2
5
10
20
50
Gate Registance Rg (Ω)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10000
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Ta = 25°C
1000
Eoff
100
Eon
10
2
5
10
20
50
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
1000
V_CC = 300 V, V_GE = 15 V
I_C = 10 A, Ta = 25°C
Eoff
100
Eon
10
2
5
10
20
50
Gate Registance Rg (Ω)
(Inductive load)
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
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