RJH60D1DPE_11 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter

RJH60D1DPE
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
6
5
I_C = 10 A
4
20 A
Ta = 25°C
Pulse Test
3
2
1
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Transfer Characteristics (Typical)
30
V_CE = 10 V
25 ^{Pulse Test}
20
Ta = 25°C
150°C
15
10
5
0
0
4
8
12
16
Gate to Emitter Voltage V_GE (V)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
6
5
I_C = 10 A
4
20 A
Ta = 150°C
Pulse Test
3
2
1
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Diode Forward Characteristics (Typical)
40
Ta = 25°C
30
150°C
20
10
V_CE = 0 V
Pulse Test
0
0
1
2
3
4
Forward Voltege V_F (V)
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
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