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RJH60D1DPE_11 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter | |||
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RJH60D1DPE
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ Diode reverse current
ICES / IR
â
Gate to emitter leak current
IGES
â
Gate to emitter cutoff voltage
VGE(off)
4.0
Collector to emitter saturation voltage VCE(sat)
â
VCE(sat)
â
Input capacitance
Cies
â
Output capacitance
Coes
â
Reveres transfer capacitance
Cres
â
Total gate charge
Qg
â
Gate to emitter charge
Qge
â
Gate to collector charge
Qgc
â
Switching time
td(on)
â
tr
â
td(off)
â
tf
â
Short circuit withstand time
tsc
3.0
FRD forward voltage
FRD reverse recovery time
VF
â
trr
â
Notes: 3. Pulse test.
Preliminary
Typ
â
â
â
1.9
2.6
275
25
7.5
12.0
2.0
6.0
30
13
80
90
5.0
1.4
100
Max
5
±1
6.0
2.5
â
â
â
â
â
â
â
â
â
â
â
â
1.9
â
(Ta = 25°C)
Unit
Test Conditions
ïA VCE = 600 V, VGE = 0
ïA VGE = ±30 V, VCE = 0
V
VCE = 10 V, IC = 1 mA
V
IC = 10 A, VGE = 15 V Note3
V
IC = 20 A, VGE = 15 V Note3
pF VCE = 25 V
pF
VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 10 A
ns VCC = 300V, VGE = 15 V
ns IC = 10 A,
ns Rg = 5 ïï
ns Inductive load
ïs VCC ï£ 360V, VGE = 15 V
V
IF = 10 A Note3
ns IF = 10 A
diF/dt = 100 A/ïs
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
Page 2 of 7
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