RJH1DF7RDPQ-80 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH1DF7RDPQ-80
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
Tc = 25°C
0.3 _0.2
0.1
0.1 _0.05
0.02
0.03
1 shot pulse
0.01
0.01
10 μ
100 μ
1m
θj − c(t) = γs (t) • θj − c
θj − c = 0.5°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
10 m
100 m
1
10
Pulse Width PW (s)
Preliminary
Switching Time Test Circuit
Ic Monitor
R_L
Vin Monitor
Rg
D.U.T.
V_CC
Vin = 15 V
Waveform
90%
Vin
10%
90%
90%
Ic
td(on)
10%
tr
td(off)
ton
toff
10%
tf
R07DS0413EJ0100 Rev.1.00
May 18, 2011
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