RJH1DF7RDPQ-80 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH1DF7RDPQ-80
Main Characteristics
Maximum Safe Operation Area
1000
PW = 10 μs
100
10
1
0.1
Tc = 25°C
Single pulse
0.01
1
10
100
1000 10000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
80
V_CE = 10 V
Pulse Test
60
40
Tc = 75°C
25°C
20
–25°C
0
2
4
6
8
10
12
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
5
4
I_C = 100 A
3
60 A
35 A
2
1
V_GE = 15 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
R07DS0413EJ0100 Rev.1.00
May 18, 2011
Preliminary
Typical Output Characteristics
100
Ta = 25°C
Pulse Test
80
9.6 V
10 V
60
15 V
20 V
40
20
9.4 V
9.2 V
9V
8.8 V
8.6 V
8.4 V
V_GE = 8.2 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Ta = 25°C
Pulse Test
4
I_C = 100 A
3
60 A
35 A
2
1
6 8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
I_C = 10 mA
6
1 mA
4
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
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