RJH1DF7RDPQ-80 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH1DF7RDPQ-80
Forward Current vs. Forward Voltage (Typical)
40
V_GE = 0 V
Ta = 25°C
Pulse Test
30
20
10
0
0
2
4
6
8
C-E Diode Forward Voltage V_CEF (V)
Dynamic Input Characteristics (Typical)
800
V_GE
16
V_CE V_CC = 600 V
600
300 V
12
400
200
0
0
8
V_CC = 600 V
300 V
4
I_C = 35 A
Ta = 25°C
0
40 80 120 160 200
Gate Charge Qg (nC)
Switching Characteristics (Typical) (2)
10000
V_CC = 600 V, V_GE = 15 V
I_C = 35 A, Ta = 25°C, Registive Load
1000
100
td(off)
tf
tr
td(on)
10
1
10
100
Gate Resistance Rg (Ω)
Preliminary
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
100
Coes
10
V_GE = 0 V
f = 1 MHz
Cres
Ta = 25°C
1
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Switching Characteristics (Typical) (1)
1000
tf
td(off)
100
td(on)
tr
10
V_CC = 600 V, V_GE = 15 V
Rg = 5 Ω, Ta = 25°C, Resistive load
1
1
10
100
Collector Current I_C (A)
Switching Characteristics (Typical) (3)
1000
tf
td(off)
100
tr
td(on)
V_CC = 600 V, V_GE = 15 V
I_C = 35 A, Rg = 5 Ω, Registive Load
10
25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0413EJ0100 Rev.1.00
May 18, 2011
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