RJF0613JSP_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – 60 V - 10 A - N Channel MOS FET Power Switching

RJF0613JSP
Target Specifications
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
10
8
6
24 V
V_DD = 16 V
4
2
0
10
100
1000
10000
Shutdown Time of Load-Short Test Pw (μs)
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I_D = 0.5 A
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1 ^D=1
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
1shot ^pulse
0.001
100 μ 1 m
θch − f(t) = γs (t) • θch − f
θch − f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PDM
D=
PW
T
PW
T
10 m
100 m
1
10
Pulse Width PW (S)
100
1000 10000
R07DS0874EJ0100 Rev.1.00
Aug 29, 2012
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