RJF0613JSP_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – 60 V - 10 A - N Channel MOS FET Power Switching

RJF0613JSP
Main Characteristics
Power vs. Temperature Derating
4.0
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
3.0
2.0
1.0
0
0
50
100
150
200
Ambient temperature Ta (°C)
Typical Output Characteristics
50
40
30
10 V
9V
20
8V
7V
10
4V
V_GS = 3 V
Pulse Test
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
200
I_D = 5 A
100
2.5 A
1A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS0874EJ0100 Rev.1.00
Aug 29, 2012
Target Specifications
Maximum Safe Operation Area
100
Thermal shut down
operation area
10
1
0.1
DC
Operation in this area
is limited by R_DS(on)
Operation
(PW_{≤1N0sot)e7}
1 ms
0.01
0.01
0.1
1
10
100
Drain Source Voltage V_DS (V)
Note 7: When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
6
150°C
4
25°C
Tc = –40°C
2
0
0
1
2
3
4
Gate to Source Voltage V_GS (V)
Static Drain to Source State Resistance
vs. Drain Current
1000
Pulse Test
100
V_GS = 4 V
10 V
10
1
0.1
1
10
100
Drain Current I_D (A)
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