RJF0613JSP_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 60 V - 10 A - N Channel MOS FET Power Switching

Target Specifications Datasheet
RJF0613JSP
60 V - 10 A - N Channel MOS FET
Power Switching
R07DS0874EJ0100
Rev.1.00
Aug 29, 2012
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
 Logic level operation (4 V Gate drive).
 Built-in the over temperature shut-down circuit.
 High endurance capability against to the short circuit.
 Latch type shut down operation (need 0 voltage recovery).
 Built-in the current limitation circuit.
 High density mounting
 Power supply voltage applies 12 V and 24 V.
 AEC-Q101 Compliant
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8765
1234
G
Gate resistor
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
Current
Limitation
Circuit
DDDD
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
SSS
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DSS
60
Gate to source voltage
Gate to source voltage
Drain current
V_GSS
V_GSS
I_D ^Note3
16
–2.5
10
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^{Note 1}
10
4.7
94.7
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
2. Tch = 25C, Rg  50 
3. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
R07DS0874EJ0100 Rev.1.00
Aug 29, 2012
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