PD16818_15 Datasheet, PDF (5/17 Pages) Renesas Technology Corp – MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

µPD16818
ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified)
VDD = VM = 2.7 V to 3.6 V
Parameter
Symbol
Conditions
MIN. TYP. MAX. Unit
OFF VM pin current
IM
INC pin low
VM = VDD = 3.6 V
1.0
µA
VDD pin current
IDD
Note 1
0.4
1.0
mA
High-level input current
IIH1
TA = 25 °C, VIN = VDD
1.0
µA
(IN1, IN2, INC)
0 ≤ TA ≤ 60 °C, VIN = VDD
2.0
Low-level input current
IIL1
TA = 25 °C, VIN = 0
–0.09 mA
(IN1, IN2, INC)
0 ≤ TA ≤ 60 °C, VIN = 0
–0.12
PS pin high-level input current
IIH2
TA = 25 °C, VIN = VDD
0.09
mA
0 ≤ TA ≤ 60 °C, VIN = VDD
0.12
PS pin low-level input voltage
IIL2
TA = 25 °C, VIN = 0
–1.0
µA
0 ≤ TA ≤ 60 °C, VIN = 0
–2.0
Input pull-up resistance
RINU
TA = 25 °C
35
50
65
kΩ
(IN1, IN2, INC)
0 ≤ TA ≤ 60 °C
25
75
PS pin input pull-down resistance
RIND
TA = 25 °C
35
50
65
kΩ
0 ≤ TA ≤ 60 °C
25
75
Control pin high-level input voltage
VIH
2.0
VDD + 0.3 V
Control pin low-level input voltage
H bridge ON resistance^{Note 2}
VIL
RON1
VDD = VM = 3 V
–0.3
0.8
V
1.2
2.4
Ω
RON relative accuracy
∆RON
Excitation direction <1>, <3>
±15
%
Excitation direction <2>, <4>^{Note 3}
±5
Vx voltage in power-saving
mode^{Note 4}
VX
VDD = VM = 3 V
RX = 270 kΩ
1.0
1.2
1.4
V
Vx relative accuracy in power-
∆VX
Excitation direction <1>, <3>
±5
%
saving mode
Excitation direction <2>, <4>
±5
Charge pump circuit turn ON time tONG
VDD = VM = 3 V
0.3
2.0
ms
H bridge turn ON time
tONH
C1 = C2 = C3 = 10nF
2.0
µs
H bridge turn OFF time
tOFFH
RM = 20 Ω
5.0
µs
Notes 1. When IN1 = IN2 = INC = “H”, PS = “L”
2. Sum of ON resistances of top and bottom MOS FETs
3. For the excitation direction, refer to FUNCTION TABLE.
4. Vx is a voltage at point A (FORWARD) or B (REVERSE) of the H bridge in FUNCTION TABLE.
Data Sheet S11365EJ2V1DS
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