PD16818_15 Datasheet, PDF (4/17 Pages) Renesas Technology Corp – MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

µPD16818
RECOMMENDED OPERAING CONDITIONS
Parameter
Supply voltage Motor block
Control block
Rx pin connection resistance
H bridge drive current (VDD = VM = 3 V)^Note
µPD16818GS
Charge pump capacitor capacitance
Operating temperature
Symbol MIN. TYP. MAX. Unit
VM
2.7
6.0
V
VDD
2.7
6.0
RX
2
kΩ
IDR
430
mA
C1-C3
5
20
nF
TA
0
60
°C
Note When mounted on a glass epoxy printed circuit board (100 mm × 100 mm × 1 mm)
ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified)
VDD = VM = 4.0 V to 6.0 V
Parameter
Symbol
Conditions
MIN. TYP. MAX. Unit
OFF VM pin current
IM
INC pin low
VM = VDD = 6 V
1.0
µA
VDD pin current
IDD
Note 1
1.0
2.0
mA
High-level input current
IIH1
TA = 25 °C, VIN = VDD
1.0
µA
(IN1, IN2, INC)
0 ≤ TA ≤ 60 °C, VIN = VDD
2.0
Low-level input current
IIL1
TA = 25 °C, VIN = 0
–0.15 mA
(IN1, IN2, INC)
0 ≤ TA ≤ 60 °C, VIN = 0
–0.2
PS pin high-level input current
IIH2
TA = 25 °C, VIN = VDD
0.15
mA
0 ≤ TA ≤ 60 °C, VIN = VDD
0.2
PS pin low-level input voltage
IIL2
TA = 25 °C, VIN = 0
–1.0
µA
0 ≤ TA ≤ 60 °C, VIN = 0
–2.0
Input pull-up resistance
RINU
TA = 25 °C
35
50
65
kΩ
(IN1, IN2, INC)
0 ≤ TA ≤ 60 °C
25
75
PS pin input pull-down resistance
RIND
TA = 25 °C
35
50
65
kΩ
0 ≤ TA ≤ 60 °C
25
75
Control pin high-level input voltage
VIH
3.0
VDD + 0.3 V
Control pin low-level input voltage
H bridge ON resistance^{Note 2}
VIL
RON2
VDD = VM = 5 V
–0.3
0.8
V
1.0
2.0
Ω
RON relative accuracy
∆RON
Excitation direction <1>, <3>
Excitation direction <2>, <4>^{Note 3}
±15
%
±5
Charge pump circuit turn ON time
H bridge turn ON time
H bridge turn OFF time
tONG
tONH
tOFFH
VDD = VM = 5 V
C1 = C2 = C3 = 10nF
RM = 20 Ω
0.3
2.0
ms
2.0
µs
5.0
µs
Notes 1. When IN1 = IN2 = INC = “H”, PS = “L”
2. Sum of ON resistances of top and bottom MOS FETs
3. For the excitation direction, refer to FUNCTION TABLE.
2
Data Sheet S11365EJ2V1DS