NP80N055MDG_15 Datasheet, PDF (5/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP80N055MDG, NP80N055NDG, NP80N055PDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 55 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
Forward Transfer Admittance ^Note
Drain to Source On-state Resistance ^Note
VGS(th)
| yfs |
RDS(on)1
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 35 A
VGS = 10 V, ID = 40 A
NP80N055MDG, NP80N055NDG
MIN.
1.4
25
VGS = 10 V, ID = 40 A
NP80N055PDG
RDS(on)2
VGS = 4.5 V, ID = 35 A
NP80N055MDG, NP80N055NDG
VGS = 4.5 V, ID = 35 A
NP80N055PDG
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
Body Diode Forward Voltage ^Note
QGD
VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 28 V, ID = 40 A,
VGS = 10 V,
RG = 0 Ω
VDD = 44 V,
VGS = 10 V,
ID = 80 A
IF = 80 A, VGS = 0 V
IF = 80 A, VGS = 0 V,
di/dt = 100 A/μs
TEST CIRCUIT 2 SWITCHING TIME
TYP.
64
5.4
4.8
6.3
5.9
4600
390
240
17
13
77
7
90
13
26
0.95
38
45
MAX.
1
±100
2.5
6.9
UNIT
μA
nA
V
S
mΩ
6.6
mΩ
11.2 mΩ
10.9 mΩ
6900 pF
590
pF
430
pF
37
ns
33
ns
154
ns
18
ns
135
nC
nC
nC
1.5
V
ns
nC
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
BVDSS
IAS
ID
VDD
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS ^90%
90%
10% 10%
tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
Data Sheet D19796EJ1V0DS
3