NP80N055MDG_15 Datasheet, PDF (4/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP80N055MDG, NP80N055NDG, NP80N055PDG
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
±80
A
±200
A
Total Power Dissipation (TC = 25°C)
PT1
115
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Storage Temperature
Repetitive Avalanche Current ^Note2
Repetitive Avalanche Energy ^Note2
Tstg
−55 to +175 °C
IAR
33
A
EAR
111
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.30
83.3
°C/W
°C/W
2
Data Sheet D19796EJ1V0DS