NP50P04SLG Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP50P04SLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-75
VGS = −4.5 V
-25 25
−10 V
75
ID = −25 A
Pulsed
125 175
T_ch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
tr
10
VDD = −20 V
VGS = −10 V
RG = 0 Ω
1
-0.01
-0.1
tf
td(on)
-1
-10
I_D - Drain Current - A
-100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-1000
-100
VGS = −10 V
-10
-1
−5.0 V ^{−4.5 V}
-0.1
0V
-0.01
-0.001
-0.0001
0
0.2 0.4 0.6 0.8
Pulsed
1 1.2 1.4
V_F(S-D) - Source to Drain Voltage - V
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10.00
Ciss
Coss
1.00
Cr ss
VGS = 0 V
f = 1 MHz
0.10
-0.01
-0.1
-1
-10
-100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-35
-15
VDS
-30
VDD = −32 V
-25
-10
−20 V
-20
−8 V
-15
-5
-10
-5
0
0
ID = −50 A
0
10 20 30 40 50 60 70 80 90 100
Q_G - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
-0.1
VGS = 0 V
di/dt = −100 A/μs
-1
-10
-100
I_F - Diode Forward Current - A
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