NP29N06QUK Datasheet, PDF (5/9 Pages) Renesas Technology Corp – 60 V – 30 A – Dual N-channel Power MOS FET

NP29N06QUK
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
70
60
50
40
30
20
10
0
0
0.2 0.4 0.6 0.8
V_GS=10V
Pulsed
1 1.2 1.4
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
V_DS = V_GS
I_D=250μA
0
-100 -50
0
50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
30
20
10
V_GS=10V
Pulsed
0
0.1
1
10
100
I_D - Drain Current - A
R07DS1331EJ0100 Rev.1.00
Mar 28, 2016
FORWARD TRANSFER CHARACTERISTICS
100
10
TA=175°C
125°C
75°C
25°C
1
-40°C
-55°C
0.1
0.01
V_DS = 10V
Pulsed
0.001
0
1
2
3
4
5
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA=175°C
125°C
75°C
25°C
-40°C
-55°C
10
V_DS = 5V
Pulsed
1
0.1
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
30
I_D= 6A
15A
30A
20
10
0
0
I_D=15A
5
10
15
20
V_GS - Gate to Source Voltage - V
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