 English |
|
|
|
|
|
|
|
| NP29N06QUK Datasheet, PDF (1/9 Pages) Renesas Technology Corp – 60 V – 30 A – Dual N-channel Power MOS FET | |||
| |||
|
NP29N06QUK
60 V â 30 A â Dual N-channel Power MOS FET
Application: Automotive
Data Sheet
R07DS1331EJ0100
Rev.1.00
Mar 28, 2016
Description
NP29N06QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Super low on-state resistance
⯠RDS(on) = 21 mΩ MAX. (VGS = 10 V, ID = 15 A)
⢠Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)
⢠Designed for automotive application and AEC-Q101 qualified
⢠Small size package 8-pin HSON dual
Outline
Drain 1
Drain 2
Gate 1
Body
Diode Gate 2
Body
Diode
Source 1
Source 2
8-pin HSON dual
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP29N06QUK-E1-AY *1
NP29N06QUK -E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
Package
8-pin HSON dual
R07DS1331EJ0100 Rev.1.00
Mar 28, 2016
Page 1 of 7
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese