NP29N06QUK Datasheet, PDF (4/9 Pages) Renesas Technology Corp – 60 V – 30 A – Dual N-channel Power MOS FET

NP29N06QUK
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0
50
100
150
200
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0
0
50
100
150
200
T_C - Case Temperature - °C
100
10
1
ID(pulse)=60A
ID(DC)=30A
Power Dissipation Limited
0.1
Secondary Breakdown Limited
T_C=25℃
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage – V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 150°C/W
10
Rth(ch-C) = 3.37°C/W
1
0.1
One channel operation
Single pulse
Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area(35μm)
0.01
100 μ
1m
10 m 100 m
1
10
100
PW - Pulse Width - s
1000
R07DS1331EJ0100 Rev.1.00
Mar 28, 2016
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