NP28N10SDE_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP28N10SDE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
100
V_GS = 10 V
4.5 V
80
60
40
20
I_D = 14 A
Pulsed
0
-100 -50 0 50 100 150 200
T_ch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
VDD = 50 V
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
10
tr
1
0.1
1
tf
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
Pulsed
100
VGS = 10 V
10
0V
1
0.1
0.01
0.0
0.5
1.0
1.5
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1MHz
C iss
1000
C oss
C rss
100
10
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
90
80
70
60
ID = 28 A
VDD = 80 V
50 V
20 V
10
8
VGS
6
50
40
4
30
20
2
VDS
10
0
0
0 5 10 15 20 25 30 35 40 45 50
Q_G - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1
1
10
100
I_F - Drain Current - A
R07DS0507EJ0100 Rev.1.00
Sep 16, 2011
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