NP28N10SDE_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP28N10SDE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
60
50
V_GS = 10 V
Pulsed
40
4.5 V
30
20
10
0
0
1
2
3
4
5
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
3
V_DS = V_GS
I_D = 250 μA
2
1
0
-100 -50 0
50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
90 ^Pulsed
80
70
60
50
V_GS = 4.5 V
40
30
10 V
20
10
0
0.1
1
10
100
I_D - Drain Current - A
R07DS0507EJ0100 Rev.1.00
Sep 16, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
T_A = −55°C
−25°C
10
25°C
75°C
1
125°C
150°C
175°C
0.1
0.01
V_DS = 10 V
Pulsed
0.001
0
1
2
3
4
5
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA = −55°C
−25°C
25°C
75°C
10
1
0.1
125°C
150°C
175°C
VDS = 10 V
Pulsed
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
Pulsed
70
60
I_D = 28 A
14A
50
40
30
5.6 A
20
10
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate to Source Voltage - V
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