NP16N04YUG_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP16N04YUG
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
50
45
VGS = 10 V
ID = 8 A
40
Pulsed
35
30
25
20
15
10
5
0
-100 -50 0
50 100 150 200
T_ch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
10
td(on)
tf
tr
1
0.1
1
10
100
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 10 V
10
0V
1
0.1
0
Pulsed
0.2
0.4
0.6
0.8
1
1.2
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
100
Crss
10
VGS = 0 V
f = 1 MHz
1
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
12
VDD = 32 V
ID = 16 A
30
20 V
10
8V
25
8
20
VGS
6
15
4
10
5
2
VDS
0
0
0 2 4 6 8 10 12 14 16 18
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1
10
100
I_F - Drain Current - A
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
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