NP16N04YUG_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP16N04YUG
Chapter Title
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(ON) Limited
100 ^{(VGS = 10 V)}
TC = 25°C
Single Pulse
ID(Pulse) = 48 A
PW = 100 μs
10
Power Disspation
1 ms
Limited
1
10 ms
Secondary Brakedown
Limited
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
40
35
30
25
20
15
10
5
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
T_C - Case Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 150°C/W
10
1
0.1
0.01
100 μ
Rth(ch-C) = 4.17°C/W
Single pulse
Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt
with 4% copper area (35 μm)
1m
10 m
100 m 1
10
100
1000
PW - Pulse Width - s
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
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