NP16N04YUG_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP16N04YUG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0362EJ0100
Rev.1.00
Jun 13, 2011
Description
The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ R_DS(on) = 25 mΩ MAX. (V_GS = 10 V, I_D = 8 A)
• Low C_iss: C_iss = 740 pF TYP. (V_DS = 25 V, V_GS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON
Ordering Information
Part No.
Lead Plating
Packing
NP16N04YUG-E1-AY ^∗1
Pure Sn (Tin)
Tape 2500 p/reel Taping (E1 type)
NP16N04YUG-E2-AY ^∗1
Taping (E2 type)
Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON
Absolute Maximum Ratings (T_A = 25°C)
Item
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC) (T_C = 25°C)
Drain Current (pulse) ^∗1
Total Power Dissipation (T_C = 25°C)
Total Power Dissipation (T_A = 25°C) ^∗2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ^∗3
Repetitive Avalanche Energy ^∗3
Symbol
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T1
P_T2
T_ch
T_stg
I_AR
E_AR
Ratings
40
±20
±16
±48
36
1.0
175
−55 to +175
13
12
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ^∗2
R_th(ch-C)
R_th(ch-A)
4.17
150
°C/W
°C/W
Notes: ^∗1. T_C = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗_{2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area (35 μm)}
∗_{3. Tch(peak) ≤ 150°C, RG = 25 Ω}
Caution This product is an electrostatic-sensitive device due to low ESD capability and should be handled
with caution for electrostatic discharge. HBM (C = 100 pF, R = 1.5 kΩ) ± 500 V.
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
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