NP160N055TUJ_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP160N055TUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6.0
VGS = 10 V
5.0 ^{ID = 80 A}
Pulsed
4.0
3.0
2.0
1.0
0.0
-100 -50 0
50 100 150 200
T_ch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
VDD = 28 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
td(off)
td(on)
tr
tf
10
100
1000
I_D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
0V
10
1
Pulsed
0.1
0
0.5
1
1.5
V_F(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
0.1
1
10
100
V_DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
50
VDD = 44 V
40
28 V
11 V
30
10
VGS
8
6
20
4
10
0
0
VDS
2
ID = 160 A
0
20 40 60 80 100 120
Q_G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
0.1
di/dt =100 A/μs
VGS = 0 V
1
10
100
1000
I_F - Drain Current - A
R07DS0022EJ0100 Rev.1.00
Jul 01, 2010
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