NP160N055TUJ_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP160N055TUJ
Chapter Title
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
ID(pulse)
ID(DC)
PW
= _{1100 μs}
Power Dissipation Limited
10 RDS(on) Limited
(VGS = 10 V)
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A): 83.3°C/W
10
1
Rth(ch-C): 0.60°C/W
0.1
0.01
Single pulse
0.001
100 μ
1m
10 m 100 m
1
10
PW - Pulse Width - s
100
1000
R07DS0022EJ0100 Rev.1.00
Jul 01, 2010
Page 3 of 6