NP160N055TUJ_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP160N055TUJ
700
600
500
400
300
200
100
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed
0.5 1 1.5 2 2.5 3 3.5
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
4.0
3.0
2.0
1.0
VDS = VGS
ID = 250 μA
0.0
-100
0
100
200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
8
VGS = 10 V
7 _Pulsed
6
5
4
3
2
1
0
1
10
100
1000
I_D - Drain Current - A
R07DS0022EJ0100 Rev.1.00
Jul 01, 2010
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
0.01
0.001
0
TA = −55°C
25°C
85°C
150°C
175°C
2
VDS = 10 V
Pulse
4
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
1000
TA = −55°C
25°C
100
85°C
150°C
175°C
10
VDS = 5 V
Pulsed
1
1
10
100
1000
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
ID = 160 A
4
80 A
32 A
Pulsed
3
2
1
0
0
5
10
15
20
25
V_GS - Gate to Source Voltage - V
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