HAT2299WP Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2299WP
Gate to Source Cutoff Voltage
vs. Case Temperature
5
V_DS = 10 V
4
I_D = 10 mA
1 mA
3
2
0.1 mA
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.01
0.02
0.01
1shot
pulse
10 µ
100 µ
θ_{ch - c(t) =} γ_{s (t) •} θ _{ch - c}
θ _{ch - c = 5°C/ W, Tc = 25°C}
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
R_L
V_DD
= 75V
Waveform
90%
Vin
Vout
10%
10%
10%
90%
90%
td(on)
tr
td(off)
tf
Rev.1.00 Mar 20, 2007 page 5 of 6