HAT2299WP Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2299WP
Static Drain to Source on State Resistance
vs. Temperature
0.5
V_GS = 10 V
Pulse Test
0.4
I_D = 28 A
0.3
14 A
0.2
7A
0.1
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
V_GS = 0
f = 1 MHz
1000
300
100
30
Ciss
Coss
10
Crss
3
1
0
50
100
150
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
V_GS = 10 V, V_DD = 75 V
PW = 5 µs, duty ≤ 1 %
tf _{RG = 10 Ω}
tr
100
td(on)
td(off)
10
tf
tr
1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = −25°C
10
25°C
3
75°C
1
0.3
V_DS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
Dynamic Input Characteristics
240
I_D = 14 A
180
V_DS
120
V_DD = 30 V
60 V
120 V
16
V_GS
12
8
60
V_DD = 120 V
4
60 V
30 V
0
0
4
8
12
16
20
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
10 V
4 ^5V
V_GS = 0, −5 V
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Rev.1.00 Mar 20, 2007 page 4 of 6