HAT2299WP Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2299WP
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
20
10 V
8V
16
7 V Pulse Test
6.5 V
12
5.9 V
8
4
V_GS = 5.4 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
8
Pulse Test
6
4
I_D = 28 A
2
14 A
7A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.1.00 Mar 20, 2007 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
1
1 _ms
(TDc ^C= O25p_{°eCra) tion}
100
10
µ_s
µ_s
0.3
PW = 10 ms
0.1
(1shot)
0.03 _{Operation in this}
0.01
area is limited by
R_DS(on)
0.003
Ta = 25°C
0.001
1 3 10 30
100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
Tc = 75°C
8
25°C
4
−25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
V_GS = 10 V
0.5
0.2
0.1
0.05
0.02
0.01
1
Pulse Test
3 10 30 100 300 1000
Drain Current I_D (A)