HAT2254R Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET

HAT2254R
Reverse Drain Current vs.
Source to Drain Voltage
20
16
10V
5V
12
V_GS = 0,-5 V
8
4
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V _SD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
I _AP = 11 A
16
V _DD = 15 V
duty < 0.1 %
Rg > 50 
12
8
4
0
25 50 75 100 125 150
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1 ^D=1
0.1
0.01
0.001
0.5
0.2
0.1
0.05
0.02
0.01
1shot ^pulse
0.0001
10  100  1 m
_c_h_-_f₍_t₎₌_s₍_t₎_x _{ch - f}
 _{ch - f = 83.3C/W, Ta = 25C}
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (s)
100 1000 10000
R07DS1367EJ0101 Rev.1.01
Jan 20, 2017
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