HAT2254R Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET

HAT2254R
Silicon N Channel Power MOSFET
Power Switching
Features
 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
R_DS(on) = 7.2 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
Data Sheet
R07DS1367EJ0101
Rev.1.01
Jan 20, 2017
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
14
112
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP ^{Note 2}
EAR ^{Note 2}
Pch ^Note3
14
14
19.6
2.5
Channel to ambient thermal impedance
ch-a ^Note3
50
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
°C
°C
R07DS1367EJ0101 Rev.1.01
Jan 20, 2017
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