HAT2254R Datasheet, PDF (2/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET

HAT2254R
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
30
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
RDS(on)
—
resistance
RDS(on)
—
Forward transfer admittance
|yfs|
18
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg ^Note5
0.8
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery
trr
—
time
Body–drain diode reverse
recovery charge
Qrr
—
Notes: 4. Pulse test
5. Screening test performed on wafer
Typ
—
—
—
—
7.2
9.6
30
1700
390
135
1.3
11
4.7
2.5
8.5
5
38
3.8
0.80
28
25
Max
—
± 0.1
1
2.5
9.0
14.0
—
3400
—
—
4.0
—
—
—
—
—
—
—
1.04
56
50
Unit
V
A
A
V
m
m
S
pF
pF
pF

nc
nc
nc
ns
ns
ns
ns
V
ns
nC
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 7 A, VGS = 10 V ^Note4
ID = 7 A, VGS = 4.5 V ^Note4
ID = 7 A, VDS = 10 V ^Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 14 A
VGS = 10 V, ID = 7 A
VDD  10 V
RL = 1.42 
Rg = 4.7 
IF = 14 A, VGS = 0 ^Note4
IF = 14 A, VGS = 0
diF/ dt = 100 A/ s
R07DS1367EJ0101 Rev.1.01
Jan 20, 2017
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