HAT2189WP_09 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2189WP
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.01
0^.02
0^.01
1^shot
p^ulse
10 μ
100 μ
θ_{ch - c(t) =} γ_{s (t) •} θ _{ch - c}
θ _{ch - c = 6.25°C/ W, Tc = 25°C}
PD_M
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
R_L
V_DD
= 100 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(o_ff)
t_f
REJ03G1251-0200 Rev.2.00 Aug 28, 2009
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