HAT2189WP_09 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2189WP
Main Characteristics
Maximum Safe Operation Area
100
10
PW
10 _μs
= _{100 μs}
1
Operation in this
area is limited by
0.1
R_DS(on)
0.01
Tc = 25°C
0.001 ^{1 shot}
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
Tc = −25°C 25°C
75°C
12
8
4
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1.2
V_GS = 10 V
1.0 ^{Pulse Test}
0.8
I_D = 17 A
8.5 A
0.6
0.4
4.3 A
0.2
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1251-0200 Rev.2.00 Aug 28, 2009
Page 3 of 6
Typical Output Characteristics
20
Ta = 25°C
Pulse Test
16
10 V ^{9 V}
8V
7V
12
6.5 V
8
6V
4
5.5 V
V_GS = 5 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
1
V_GS = 10 V
Ta = 25°C
Pulse Test
0.1
0.01
1
10
100
Drain Current I_D (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
10
Crss
V_GS = 0
f = 1 MHz
Ta = 25°C
1
0
20 40 60 80 100
Drain to Source Voltage V_DS (V)