HAT2189WP_09 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2189WP
Dynamic Input Characteristics (Typical)
400
I_D = 8.5 A
Ta = 25 °C
16
V_GS
300
200
V_DS
V_DD = 160 V ¹²
100 V
50 V
8
100
0
0
4
V_DD = 160 V
100 V
50 V
0
4
8
12 16 20
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V_DS = 10 V
4
3
I_D = 10 mA
1 mA
0.1 mA
2
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
V_GS = 0, Ta = 25 °C
Pulse Test
16
12
8
4
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
REJ03G1251-0200 Rev.2.00 Aug 28, 2009
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