HAT2096H Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon N Channel Power MOSFET Power Switching

HAT2096H
Reverse Drain Current vs.
Source to Drain Voltage
50
10 V
40
5V
Pulse Test
30
V_GS = 0
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.02
0.01
1shot ^pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
P_DM
D = ^PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DS
= 10 V
Vin
Vout
10%
10%
td(on)
90%
tr
90%
10%
90%
td(off)
tf
Rev.4.00 Sep 07, 2005 page 5 of 6