HAT2096H Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N Channel Power MOSFET Power Switching

HAT2096H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50 _{10 V}
4.5 V
40
3.5 V
Pulse Test
30
3V
20
10
V_GS = 2.5 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
0.12
0.08
0.04
I_D = 10 A
5A
2A
0
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.4.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
500
100
10
DC
100
OPpWera=ti1o0n1mmss
10
µ_s
µ_s
Operation in
1 _{this area is}
limited by R_{DS (on)}
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
–25°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
V_GS = 4.5 V
5
10 V
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I_D (A)