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| HAT2096H Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel Power MOSFET Power Switching | |||
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HAT2096H
Silicon N Channel Power MOS FET
Power Switching
Features
⢠Capable of 4.5 V gate drive
⢠Low drive current
⢠High density mounting
⢠Low on-resistance
RDS (on) = 4.2 m⦠typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
4
G
1234
5
D
S SS
1 23
REJ03G1186-0400
(Previous: ADE-208-1431B)
Rev.4.00
Sep 07, 2005
1, 2, 3
4
5
Source
Gate
Drain
Rev.4.00 Sep 07, 2005 page 1 of 6
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