FY7BCH-02B Datasheet, PDF (5/6 Pages) Renesas Technology Corp – MITSUBISHI POWER MOSFET HIGH-SPEED SWITCHING USE Nch POWER MOSFET

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
TRANSFER CHARACTERISTICS
(TYPICAL)
50
40
30
Tc = 25°C
20
VDS = 10V
Pulse Test
10
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
3
2
10³
7
5
3
2 ^{Tch = 25°C}
VGS = 0V
f = 1MHZ
10²
7
5
Ciss
Coss
Crss
3
2
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2
DRAIN-SOURCE VOLTAGE VDS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
5.0
VDS =
4.0
7V
10V
3.0
15V
2.0
1.0
0
0
ID =7A
Tch = 25°C
8
16 24 32 40
GATE CHARGE Qg (nC)
MITSUBISHI POWER MOSFET
FY7BCH-02B
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7 ^{TC = 25°C,75°C,125°C}
5
3
2
10¹
7
5
VDS =10V
Pulse Test
3
2
10⁰_{100 2 3 5 7 101 2 3 5 7 102}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
tf
10²
td(off)
7
tr
5
3
td(on)
2
10¹
7
5
3
2
10⁰
10^–1 2 3
Tch = 25°C
VGS = 4V
VDD = 10V
RGEN = RGS = 50Ω
5 7 10⁰ 2 3 5 7 10¹
DRAIN CURRENT ID (A)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
TC =
25°C
75°C
12
125°C
8
VGS = 0V
TC = 25°C
4
Pulse Test
0
0
0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE VSD (V)
Aug. 1999