FY7BCH-02B Datasheet, PDF (3/6 Pages) Renesas Technology Corp – MITSUBISHI POWER MOSFET HIGH-SPEED SWITCHING USE Nch POWER MOSFET

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MITSUBISHI POWER MOSFET
FY7BCH-02B
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 7A, VGS = 4V
ID = 3.5A, VGS = 2.5V
ID = 7A, VGS = 4V
ID = 7A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 10V, ID = 3.5A, VGS = 4V, RGEN = RGS = 50Ω
IS = 1.5A, VGS = 0V
Channel to ambiet
IS = 1.5A, dis/dt = –50A/µs
Limits
Unit
Min.
Typ.
Max.
20
—
—
V
—
—
±0.1 µA
—
—
0.1
mA
0.5
0.8
1.3
V
—
17
21
mΩ
—
21
30
mΩ
—
0.119 0.147 V
—
20
—
S
—
1350
—
pF
—
400
—
pF
—
300
—
pF
—
30
—
ns
—
80
—
ns
—
150
—
ns
—
160
—
ns
—
0.75 1.10
V
—
—
78.1 °C/W
—
50
—
ns
Aug. 1999