FY7BCH-02B Datasheet, PDF (4/6 Pages) Renesas Technology Corp – MITSUBISHI POWER MOSFET HIGH-SPEED SWITCHING USE Nch POWER MOSFET

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
VGS = 4V
3V
PD = 1.6W
40
2.5V
30
2V
20
Tc = 25°C
Pulse Test
10
1.5V
0
0
0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
Tc = 25°C
Pulse Test
1.6
1.2
0.8
0.4
0
0
ID = 14A
7A
3A
1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
MITSUBISHI POWER MOSFET
FY7BCH-02B
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
MAXIMUM SAFE OPERATING AREA
7
5
tw = 10µs
3
2
100µs
10¹
7
5
1ms
3
2
10⁰
7
5
TC = 25°C
Single Pulse
3
2
10ms
100ms
10^–1
7
23
5 7 10⁰
2 3 5 7 10¹
DC
23
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS = 4V,3V,2.5V
2V
Tc = 25°C
Pulse Test
16
12
1.5V
8
4
PD = 1.6W
0
0
0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
VGS = 2.5V
32
24
4V
16
8
Tc = 25°C
Pulse Test
0
10^–1 2 3 5 710⁰ 2 3 5 710¹ 2 3 5 710²
DRAIN CURRENT ID (A)
Aug. 1999