FY5ACJ-03F Datasheet, PDF (5/5 Pages) Renesas Technology Corp – MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
10
8
VDS =
15V
20V
6
25V
4
2
Tch = 25°C
ID =5A
0
0
4
8
12 16 20
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FY5ACJ-03F
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
TC =
16
25°C
75°C
12
125°C
8
VGS = 0V
Pulse Test
4
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7
5
3
2
10⁰
VGS = 10V
7
ID = 5A
5
Pulse Test
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
3.2
2.4
1.6
VDS = 10V
ID = 1mA
0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
1.2
1.0
VGS = 0V
0.8
ID = 1mA
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
10^{2 D=1.0}
7
5 =0.5
3
2 =0.2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10^{1 =0.1}
7
5
=0.05
3 ^=0.02
2
PDM
10⁰
7
=0.01
5 _{Single Pulse}
3
2
tw
T
D= ^tw
T
10^–1
10^–4
23
5 710^–3 2 3
5 710^–2 2 3
5710^–1 2 3
5 710⁰ 2 3
5 710¹
23
5 710²
23
5 710³
PULSE WIDTH tw (s)
Sep. 2001