FY5ACJ-03F Datasheet, PDF (4/5 Pages) Renesas Technology Corp – MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
Tc = 25°C
Pulse Test
1.6
1.2
0.8
0.4
2A 5A
10A
ID = 15A
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
Tc = 25°C
8
VDS = 10V
Pulse Test
4
0
0
2
4
6
8 10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
10³
7
Ciss
5
3
2
Coss
10² Tch = 25°C
7 ^{VGS = 0V}
5 ^{f = 1MHZ}
Crss
3
2
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FY5ACJ-03F
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
50
40
VGS = 4V
30
10V
20
10
Tc = 25°C
Pulse Test
0
10^–1 2 3 5 710⁰ 2 3 5 710¹ 2 3 5 710²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10²
7
5
3
2
TC = 25°C,75°C,125°C
10¹
7
5
3
2
10⁰
VDS =10V
7
Pulse Test
5
3
2
10^–₁¹_{0–1 2 3 5 7 100 2 3 5 7 101}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
10^–1 2 3
td(off)
tf
td(on)
tr
Tch = 25°C
VGS = 10V
VDD = 15V
RGEN = RGS = 50Ω
5 7 10⁰ 2 3 5 7 10¹
DRAIN CURRENT ID (A)
Sep. 2001