FY5ACJ-03F Datasheet, PDF (3/5 Pages) Renesas Technology Corp – MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FY5ACJ-03F
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR)DSS Drain-source breakdown voltage
V (BR)GSS Gate-source breakdown voltage
IGSS
Gate-source leakage current
IDSS
Drain-source leakage current
VGS (th) Gate-source threshold voltage
rDS (ON) Drain-source on-state resistance
rDS (ON) Drain-source on-state resistance
VDS (ON) Drain-source on-state voltage
| yfs |
Forward transfer admittance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
td (on)
Tum-on delay time
tr
Rise time
td (off)
Tum-off delay time
tf
Fall time
VSD
Source-drain voltage
Rth (ch-a) Thermal resistance
trr
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 2.5A, VGS = 4V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 2.5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1.5A, VGS = 0V
Channel to air
IS = 1.5A, dis/dt = –50A/µs
Limits
Unit
Min.
Typ. Max.
30
—
—
V
±20
—
—
V
—
—
±10
µA
—
—
0.1
mA
1.0
1.5
2.0
V
—
21
27
mΩ
—
34
48
mΩ
—
0.105 0.135
V
—
10
—
S
—
600
—
pF
—
200
—
pF
—
90
—
pF
—
10
—
ns
—
15
—
ns
—
50
—
ns
—
20
—
ns
—
0.75 1.10
V
—
—
78.1 °C/W
—
40
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
Tc = 25°C
VGS = 10V,8V
6V
Pulse Test
5V
40
4V
30
MAXIMUM SAFE OPERATING AREA
5
3
tw =
10µs
2
10¹
7
100µs
5
3
1ms
2
10⁰
7
5
3
TC = 25°C
2
Single Pulse
10^–1
7
5
3
2 3 5 710⁰ 2 3
5 710¹
10ms
100ms
DC
2 3 57
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS = 10V,8V,6V,5V
4V
16
Tc = 25°C
Pulse Test
12
3V
20
3V
10
PD = 1.6W
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
8
4
PD = 1.6W
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001