FX6ASJ-06 Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX6ASJ-06
On-State Resistance vs.
Channel Temperature (Typical)
10¹
7 ^{VGS = –10V}
5 ^{ID = –3A}
4 ^{Pulse Test}
3
2
10⁰
7
5
4
3
2
10^–1
–50 0
50 100 150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
Channel Temperature Tch (°C)
Switching Time Measurement Circuit
Vin Monitor
RGEN
D.U.T.
Vout
Monitor
R_L
RGS
VDD
Threshold Voltage vs.
Channel Temperature (Typical)
–4.0
VDS = –10V
ID = –1mA
–3.2
–2.4
–1.6
–0.8
0
–50 0
50 100 150
Channel Temperature Tch (°C)
Transient Thermal Impedance Characteristics
10²
7
5
3
2
10¹
7
5 ^{D = 1.0}
3 ^0.5
2 _0.2
PDM
10⁰
0.1
tw
7
5
0.05
3
0.02
2
0.01
T
D= ^tw
T
Single Pulse
10^–1_{10–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102}
Pulse Width tw (s)
Switching Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.2.00 Aug 07, 2006 page 5 of 6