FX6ASJ-06 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX6ASJ-06
Performance Curves
Power Dissipation Derating Curve
40
32
24
16
8
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–20
Tc = 25°C
Pulse Test
VGS =
–10V
–16
PD = 30W
–12
–8V
–6V
–5V
–4V
–8
–4
–3V
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–5.0
Tc = 25°C
Pulse Test
–4.0
–3.0
–2.0
ID = –12A
–1.0
0
0
–6A
–3A
–2 –4 –6 –8
–10
Gate-Source Voltage V_GS (V)
Maximum Safe Operating Area
–10²
–7
–5
–3
–2
–10¹
–7
–5
–3
–2
1ms100^µs
DC
–10⁰
–7
–5
–3
–2
Tc = 25°C
Single Pulse
–10^–1
–2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10² –2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
–10
Tc = 25°C ^{VGS = –10V}
Pulse Test
–8
–8V
–5V
–6V
–6
–4V
–4
–2
–3V
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
0.5
Tc = 25°C
Pulse Test
0.4
0.3
VGS = –4V
0.2
–10V
0.1
0
–10^–1 –2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10²
Drain Current I_D (A)
Rev.2.00 Aug 07, 2006 page 3 of 6