FX6ASJ-06 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX6ASJ-06
Transfer Characteristics (Typical)
–20
Tc = 25°C
VDS = –10V
–16
Pulse Test
–12
–8
–4
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
10⁴
7
Tch = 25°C
f = 1MHz
5
V_GS = 0V
3
2
Ciss
10³
7
5
3
2
Coss
10²
7
Crss
5
3
2
–3
–5–7–10⁰ –2 –3
–5–7–10¹ –2 –3
–5–7–10² –2 –3
Drain-Source Voltage V_DS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = –6A
–8
–6
–4
VDS =
–10V
–20V
–40V
–2
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
10¹
7
5 TC =
125°C
75°C
25°C
3
2
10⁰
7
5
3
2
10^–_–¹_{10–1 –2 –3}
–5 –7–10⁰
VDS = –5V
Pulse Test
–2 –3 –5 –7–10¹
Drain Current I_D (A)
Switching Characteristics (Typical)
3
Tch = 25°C
2
VGS = –10V
VDD = –30V
10²
RGEN = RGS = 50Ω
td(off)
7
5
4
tf
3
tr
2
td(on)
10¹
7
5
4
3
–5
–7–10^–1
–2
–3
–5–7 –10⁰ –2 –3
–5–7 –10¹ –2 –3
–5
Drain Current I_D (A)
Source-Drain Diode Forward
Characteristics (Typical)
–20
VGS = 0V
Pulse Test
–16
Tc = 125°C
–12
75°C
25°C
–8
–4
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source-Drain Voltage V_SD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6