BCR08AM Datasheet, PDF (5/6 Pages) Renesas Technology Corp – LOW POWER USE PLANAR PASSIVATION TYPE

ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140 ^{OF CONDUCTION ANGLE}
NATURAL CONVECTION
120 NO FINS
100
80
360°
60
CONDUCTION
RESISTIVE,
40
INDUCTIVE
20
LOADS
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
3
2
10²
7
5
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10⁵
7 TYPICAL EXAMPLE
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10²
7
5
DISTRIBUTION
3
T2⁺, G^–
2
TYPICAL EXAMPLE
10¹
7
5
3
2
10⁰
7
5
3 ^{T2– , G–}
2 TYPICAL EXAMPLE
10^–1
–40 0
40 80 120 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
I QUADRANT
100
80
60
40
III QUADRANT
20
0
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
Mar. 2002