BCR08AM Datasheet, PDF (3/6 Pages) Renesas Technology Corp – LOW POWER USE PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR <TRIAC>
BCR08AM
LOW POWER USE
PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VRGT I
VRGT III
IRGT I
IRGT III
VGD
Rth (j-c)
(dv/dt)c
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ^✽2
Gate trigger current ^✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Tj=125°C, VDRM applied
Tc=25°C, ITM=1.2A, Instantaneous measurement
II
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
III
II
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
III
Tj=125°C, VD=1/2VDRM
Junction to case ^✽3
✽4
Tj=125°C
✽2. Measurment using the gate trigger characteristics measurement circuit.
✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Limits
Min. Typ. Max.
—
—
1.0
—
—
2.0
—
—
2.0
—
—
2.0
—
—
5
—
—
5
0.1
—
—
—
—
60
0.5
—
—
Unit
mA
V
V
V
mA
mA
V
°C/ W
V/µs
Test conditions
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
(di/dt)c=–0.4A/ms
3. Peak off-state voltage
VD=400V
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
TIME
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10¹
7
Tc = 25°C
5
3
2
10⁰
7
5
3
2
10^–1
1.0 1.5 2.0 2.5 3.0 3.5 4.0
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
10
9
8
7
6
5
4
3
2
1
0
10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002